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Laser Edge Isolation

Scribing of Crystalline Solar Cells for Electrical Isolation

A decisive factor for the efficiency of a solar cell is the minimization of recombination losses. Therefore, the front and rear sides have to be electrically isolated on the edges.

A Laser scribing process is used for complete electric edge isolation of the front and rear sides as well as for the singulation of solar cells. Laser processing of silicon wafers and solar cells is mostly based on the direct, vapor-induced melt ejection by nanosecond laser pulses. The laser edge isloation method is especially characterized by high speed and precisi

 

 

Laser Edge Isolation on Crystalline Solar Cells

Laser Edge Isolation on Crystalline Solar Cells

The doped layers are electrically separated by scribing with q-switched Nd:YAG, Nd:Vanadate  or fiber lasers. Compared to plasma etching, laser scribing offers significant benefits due to the possibility of an automated in-line process. High power density is necessary for an enhanced melt ejection from the kerf and to avoid re-deposition of the molten material. Typical scribing speeds are in the range of 400 to 800 mm/s.

 

For laser edge isolation we recommend: PowerLine E, PowerLine D, PowerLine FLab System